Microwave potential of GaN-based Gunn devices

Authors
Alekseev, E Pavlidis, D
Citation
E. Alekseev et D. Pavlidis, Microwave potential of GaN-based Gunn devices, ELECTR LETT, 36(2), 2000, pp. 176-178
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
2
Year of publication
2000
Pages
176 - 178
Database
ISI
SICI code
0013-5194(20000120)36:2<176:MPOGGD>2.0.ZU;2-S
Abstract
Transient hydrodynamic simulations are used to carry out harmonic power ana lysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are: shown to have twice the frequency and a hundred times power capability of GaAs Gu nn diodes.