Ka-band RF MEMS phase shifters

Citation
B. Pillans et al., Ka-band RF MEMS phase shifters, IEEE MICR G, 9(12), 1999, pp. 520-522
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
12
Year of publication
1999
Pages
520 - 522
Database
ISI
SICI code
1051-8207(199912)9:12<520:KRMPS>2.0.ZU;2-V
Abstract
As the need for low-loss phase shifters increases, so does the interest in radio frequency (RF) MEMS as a solution to provide them. In this paper, pro gress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with bett er than 15-dB return loss. A similar 3-bit phase shifter produced an averag e insertion loss of 1.7 dB with better than 13 dB return loss. Both devices had a phase error of Less than 13 degrees in the fundamental states. To ou r knowledge, these devices represent the lowest loss Ka-band phase shifters reported to date.