98-GHz InP/InGaAs HBT amplifier with 26-dB gain

Authors
Morf, T Hubscher, S Huber, D Huber, A Schwarz, V Jackel, H
Citation
T. Morf et al., 98-GHz InP/InGaAs HBT amplifier with 26-dB gain, IEEE MICR G, 9(12), 1999, pp. 523-525
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
12
Year of publication
1999
Pages
523 - 525
Database
ISI
SICI code
1051-8207(199912)9:12<523:9IHAW2>2.0.ZU;2-F
Abstract
In this letter the design and characterization of an InP/InGaAs single hete rojunction bipolar transistor (HBT) W-Band amplifier is described. The ampl ifier achieves 26-dB gain at 98 GHz with a bandwidth of 3.1 GHz, On-wafer S -parameter and gain compression measurements are presented, The goal was to explore high gain HBT-amplifiers around 100 GHz. No comparable HBT amplifi er at these frequencies could be found in literature.