A single-chip coplanar 0.8-mu m GaAs MESFET K/K alpha-band DRO

Authors
Keller, MG Freundorfer, AP Antar, YMM
Citation
Mg. Keller et al., A single-chip coplanar 0.8-mu m GaAs MESFET K/K alpha-band DRO, IEEE MICR G, 9(12), 1999, pp. 526-528
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
12
Year of publication
1999
Pages
526 - 528
Database
ISI
SICI code
1051-8207(199912)9:12<526:ASC0MG>2.0.ZU;2-L
Abstract
This letter describes the design and measured results of a monolithic copla nar (CP) transmission line-based GaAs MESFET dielectric resonator oscillato r (DRO) for K/Ka-band applications. The dielectric resonator (DR) is on chi p. The measured output power was 11 dBm at 26.17 GHz for a conversion effic iency of 5.5%. The chip probed phase noise was -118.7 dBc at 1 MHz off carr ier. This represents the first reported instance of a DRO being fabricated using a CP transmission line topology.