A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer

Authors
Kok, YL Wang, H Barsky, M Lai, R Sholley, M Allen, B
Citation
Yl. Kok et al., A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer, IEEE MICR G, 9(12), 1999, pp. 529-531
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
12
Year of publication
1999
Pages
529 - 531
Database
ISI
SICI code
1051-8207(199912)9:12<529:A1MSIH>2.0.ZU;2-6
Abstract
A 180-GHz monolithic subharmonic diode mixer is developed using 0.08-mu m p seudomorphic InAlAs/InGaAs HEMT MMIC process on a 2-mil-thick InP substrate , This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an LO drive of 13 dBm at 96 GHz, This is the first demonst ration of a monolithic subharmonic HEMT diode mixer in this frequency range . The design and measurement of this monolithic microwave integrated circui t (MMIC) mixer and the waveguide-to-microstrip line transitions of the test -fixture are presented.