Thermal stability of IGBT high-frequency operation

Authors
Sheng, K Finney, SJ Williams, BW
Citation
K. Sheng et al., Thermal stability of IGBT high-frequency operation, IEEE IND E, 47(1), 2000, pp. 9-16
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
ISSN journal
02780046 → ACNP
Volume
47
Issue
1
Year of publication
2000
Pages
9 - 16
Database
ISI
SICI code
0278-0046(200002)47:1<9:TSOIHO>2.0.ZU;2-Q
Abstract
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT ) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occu rs with punch-through IGBT's at temperatures below the maximum junction tem perature when operated at high frequency at well below rated current, with snubber or soft-switching circuits.