A review is given of III-V epitaxial layer growth by chemical beam epitaxy
(CBE), molecular beam epitaxy (MBE) and metal organic vapor-phase epitaxy (
MOVPE). The static surfaces of the (0 0 1) facet are reviewed first, after
which adatom diffusion during growth on (0 0 1) and (1 1 1) surfaces is dis
cussed. The topic of carrier gas flow and gas phase chemistry as applies to
VPE processes is briefly treated next. Finally, chemical reactions are sur
veyed. (C) 2000 Elsevier Science B.V. All rights reserved.