Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE

Authors
Leys, MR
Citation
Mr. Leys, Fundamental growth kinetics in MOMBE/CBE, MBE and MOVPE, J CRYST GR, 209(2-3), 2000, pp. 225-231
Citations number
44
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
225 - 231
Database
ISI
SICI code
0022-0248(20000201)209:2-3<225:FGKIMM>2.0.ZU;2-O
Abstract
A review is given of III-V epitaxial layer growth by chemical beam epitaxy (CBE), molecular beam epitaxy (MBE) and metal organic vapor-phase epitaxy ( MOVPE). The static surfaces of the (0 0 1) facet are reviewed first, after which adatom diffusion during growth on (0 0 1) and (1 1 1) surfaces is dis cussed. The topic of carrier gas flow and gas phase chemistry as applies to VPE processes is briefly treated next. Finally, chemical reactions are sur veyed. (C) 2000 Elsevier Science B.V. All rights reserved.