Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice

The effect of growth interruption times combined with selective group-V spe cies exposure of InGaAs/AlAsSb short-period superlattice structure was inve stigated with photoluminescence, X-ray diffraction, reflection high-energy electron diffraction. X-ray data show no superlattice structural dependence on the used growth treatment. While reflection electron diffraction patter ns strongly depend on the exposure time and species type exposure. A shift in the photoluminescence peak position from samples grown under different s pecies type exposure is observed. The samples with Sb- and As-terminated in terfaces, respectively, indicate lower- and higher-energy peaks compared to the ones grown without interruption. This is interpreted in terms of incre ased incorporation of Sb in the InGaAs layer that leads to a change in the quantum well profile. (C) 2000 Elsevier Science B.V. All rights reserved.