Transition from "dome" to "pyramid" shape of self-assembled GeSi islands

Authors
Vostokov, NV Dolgov, IV Drozdov, YN Krasil'nik, ZF Lobanov, DN Moldavskaya, LD Novikov, AV Postnikov, VV Filatov, DO
Citation
Nv. Vostokov et al., Transition from "dome" to "pyramid" shape of self-assembled GeSi islands, J CRYST GR, 209(2-3), 2000, pp. 302-305
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
302 - 305
Database
ISI
SICI code
0022-0248(20000201)209:2-3<302:TF"T"S>2.0.ZU;2-C
Abstract
The paper presents the results of investigation of self-assembled Ge island s growth on Si (0 0 1) at 700 degrees C and the evolution of islands parame ters during annealing. Dissolution of Si in islands was revealed front the Raman scattering and the X-ray diffraction measurements. It was found that the content of Si in islands increased during annealing. This increase was shown to result in the changes of island sizes and island shape from "dome" to "pyramid". (C) 2000 Elsevier Science B.V. All rights reserved.