Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface

In this paper, we make use of the hydrogen passivation concept to demonstra te that the pyrolysis of disilane (Si2H6) results in two silicon atoms and all six hydrogen atoms remaining on the surface and silane (SiH4) produces one silicon atom and four hydrogen atoms on the surface, The dominant react ion pathways an identified and implications for Si film growth are discusse d. The adsorption kinetics and subsequent dissociation of silane, disilane and germane during gas source molecular beam epitaxy on the Si(0 0 1) surfa ce are studied in situ using modulated beam mass spectrometry (MBMS), tempe rature programmed desorption (TPD) and reflection high-energy electron diff raction (RHEED). These were also combined with the growth of various epitax ial layers involving repeated cycles of silane or disilane adsorption and h ydrogen desorption with the Layer thicknesses determined ex situ using X-ra y diffraction (XRD) rocking curve measurements and computer simulations. (C ) 2000 Elsevier Science B.V, All rights reserved.