Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahighvacuum system

Citation
K. Ohtsuka et al., Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahighvacuum system, J CRYST GR, 209(2-3), 2000, pp. 331-334
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
331 - 334
Database
ISI
SICI code
0022-0248(20000201)209:2-3<331:LDOSAS>2.0.ZU;2-O
Abstract
Low-temperature chemical beam epitaxy of Si using hydride sources was inves tigated for fabricating thin-film layers. In the case of a Si2H6 source, th e temperature dependence of the growth rate is relatively small in the regi on of 300-600 degrees C where the growth rate is dominated by desorption an d/or decomposition at the surface. A SiO2 thin film was also fabricated by a simultaneous supply of Si2H6 and activated oxygen from a helicon plasma s ource. The temperature dependence of the deposition rate is relatively smal l, which may correspond to the relatively small temperature dependence in t he case of chemical beam epitaxy of Si in the same temperature region. Rela tively low deposition rates, 5 nm/h for Si and 0.2-0.3 nm/min for SiO2 were achieved. Atomic and molecular level controllability is attained. (C) 2000 Elsevier Science B.V. All rights reserved.