Low-temperature chemical beam epitaxy of Si using hydride sources was inves
tigated for fabricating thin-film layers. In the case of a Si2H6 source, th
e temperature dependence of the growth rate is relatively small in the regi
on of 300-600 degrees C where the growth rate is dominated by desorption an
d/or decomposition at the surface. A SiO2 thin film was also fabricated by
a simultaneous supply of Si2H6 and activated oxygen from a helicon plasma s
ource. The temperature dependence of the deposition rate is relatively smal
l, which may correspond to the relatively small temperature dependence in t
he case of chemical beam epitaxy of Si in the same temperature region. Rela
tively low deposition rates, 5 nm/h for Si and 0.2-0.3 nm/min for SiO2 were
achieved. Atomic and molecular level controllability is attained. (C) 2000
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