Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahighvacuum system

Low-temperature chemical beam epitaxy of Si using hydride sources was inves tigated for fabricating thin-film layers. In the case of a Si2H6 source, th e temperature dependence of the growth rate is relatively small in the regi on of 300-600 degrees C where the growth rate is dominated by desorption an d/or decomposition at the surface. A SiO2 thin film was also fabricated by a simultaneous supply of Si2H6 and activated oxygen from a helicon plasma s ource. The temperature dependence of the deposition rate is relatively smal l, which may correspond to the relatively small temperature dependence in t he case of chemical beam epitaxy of Si in the same temperature region. Rela tively low deposition rates, 5 nm/h for Si and 0.2-0.3 nm/min for SiO2 were achieved. Atomic and molecular level controllability is attained. (C) 2000 Elsevier Science B.V. All rights reserved.