CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine

Monomethylhydrazine (MMHy) is examined as a nitrogen source material for C- BE growth of nitride semiconductors on GaAs(0 0 1) and (1 1 1)B substrates. We find that the AlN buffer layer insertion is effective in obtaining a he xagonal GaN layer with high crystallinity on the GaAs(1 1 1)B substrate. Fr om the mass spectrometric analysis during MMHy exposure to the GaAs and AIN surfaces, it is clarified that the effectiveness of the AIN buffer layer i s due to the high reactivity of AIN surface to the MMHy decomposition. (C) 2000 Elsevier Science B.V. All rights reserved.