A single crystalline Eu-doped GaN was grown by gas-source molecular beam ep
itaxy and photoluminescence properties were studied. The PL spectra show re
d-emission at 622 nm originating from intra 4f-4f transition of Eu3+ ion wi
thout band-edge emission of GaN. The peak shift of the red-emission with th
e temperature variation from 77 K to room temperature is 1.6 meV and therma
l quenching of the luminescence was found to be very small for the same tem
perature range. A novel optical material whose emission wavelength and inte
nsity are extremely stable with temperature was suggested. (C) 2000 Elsevie
r Science B.V. All rights reserved.