Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

A single crystalline Eu-doped GaN was grown by gas-source molecular beam ep itaxy and photoluminescence properties were studied. The PL spectra show re d-emission at 622 nm originating from intra 4f-4f transition of Eu3+ ion wi thout band-edge emission of GaN. The peak shift of the red-emission with th e temperature variation from 77 K to room temperature is 1.6 meV and therma l quenching of the luminescence was found to be very small for the same tem perature range. A novel optical material whose emission wavelength and inte nsity are extremely stable with temperature was suggested. (C) 2000 Elsevie r Science B.V. All rights reserved.