High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy

High-purity cubic GaN films have been successfully grown on a AlGaAs buffer layer by molecular beam epitaxy. A characteristic nitrided AlGaAs smooth f aceted surface was observed. It was found that GaN epilayers grown on a nit rided Al0.17Ga0.83As buffer layer were epitaxial and contained only the cub ic phase, No diffraction peaks associated with the hexagonal phase of GaN w ere observed by X-ray pole-figure measurements. (C) 2000 Elsevier Science B .V. All rights reserved.