Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma

We present a novel technique to grow AIN on sapphire heteroepitaxially by t he use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma? where metal Al is evaporated The Al N film having the c-axis perpendicular to the c-plane of sapphire was obtai ned at the growth rate of 0.5 mu m/h with the substrate temperature lower t han 600 degrees C. The him had the band gap energy of 6.0 eV and good Raman selection rules. (C) 2000 Elsevier Science B.V. All rights reserved.