A. Freundlich et al., Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy inspace ultra-vacuum, J CRYST GR, 209(2-3), 2000, pp. 435-439
Low-temperature photoluminescence and selective pair luminescence has been
used to identify shallow acceptor levels in undoped GaAs epilayers grown by
molecular beam epitaxy and metallorganic molecular beam epitaxy (triethylg
allium/As-4) in the ultra-vacuum of space generated in the wake of the free
flying Wake Shield Facility satellite (Space Shuttle Colombia mission STS
80). The low-temperature photoluminescence spectra are typical of high-puri
ty GaAs. The near-band-edge excitonic luminescence are found to be dominate
d by donor bound excitons. Carbon C-As appears as the main residual accepto
r impurity and excited state spectroscopy clearly identifies the presence o
f zinc residual acceptor (Zn-Ga). Finally, the absence of a Be impurity, in
troduced in large quantities to the growth environment prior to the MOMBE g
rowth, suggest a minimized memory effect on the free flyer. (C) 2000 Elsevi
er Science B.V. All rights reserved.