Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Authors
Mozume, T Georgiev, N Nishimura, T Yoshida, H Nishikawa, S Neogi, A
Citation
T. Mozume et al., Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 445-449
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
445 - 449
Database
ISI
SICI code
0022-0248(20000201)209:2-3<445:PCOTIH>2.0.ZU;2-0
Abstract
We report here the photoluminescence characterization of InGaAs/AlAsSb quan tum wells lattice matched to InP substrate grown by molecular beam epitaxy. A strong blueshift of the PL peak energy was observed as the excitation po wer increased. Furthermore, these peaks were shown to belong to an excitoni c recombination. We have attributed these peaks to the radiative recombinat ion of spatially separated electron-hole pairs and confirmed the type II ba nd alignment. Impurity- or defect-related transitions were also observed. ( C) 2000 Elsevier Science B.V. All rights reserved.