W. Li et al., Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 459-462
The redistribution of Be during growth of GaInP layers by gas source molecu
lar beam epitaxy has been studied using secondary ion mass spectrometry for
the first time. Apparent Be diffusion occurs at doping level over 4 x 10(1
9) cm(-3) at growth temperature of 500 degrees C. At lower temperature the
Be diffusion profile exhibits a significant increase of Be concentration an
d reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase
epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is obs
erved by nearby highly n-type doped layers. Based on these results, a p(+)-
n(+) GaInP tunnel diode with a high conductance of 15 mA/cm(2) at 1.7 mV ha
s been achieved. (C) 2000 Elsevier Science B.V. All rights reserved.