Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

Citation
W. Li et al., Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 459-462
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
459 - 462
Database
ISI
SICI code
0022-0248(20000201)209:2-3<459:BRIGAG>2.0.ZU;2-I
Abstract
The redistribution of Be during growth of GaInP layers by gas source molecu lar beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4 x 10(1 9) cm(-3) at growth temperature of 500 degrees C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration an d reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is obs erved by nearby highly n-type doped layers. Based on these results, a p(+)- n(+) GaInP tunnel diode with a high conductance of 15 mA/cm(2) at 1.7 mV ha s been achieved. (C) 2000 Elsevier Science B.V. All rights reserved.