Rs. Balmer et al., Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE), J CRYST GR, 209(2-3), 2000, pp. 486-491
An integration concept which involves the selective deposition of quantum w
ells in spatially selected areas of a wafer and in the middle of a waveguid
e structure is presented for the first time. The selective deposition is ac
hieved by the in situ insertion and removal of a shadow mask during the gro
wth process. The shadow-mask concept, and data on alignment and edge defini
tion are presented. Experimental results on selectively grown quantum wells
show that the shadow mask has no effect on the non-radiative carrier lifet
ime even when only a single quantum well is selectively deposited. The perf
ormance of laser diodes fabricated using this novel integration technique i
s compared with broad area devices grown without a shadow mask. Crown Copyr
ight (C) 2000 Published by Elsevier Science B.V. All rights reserved.