The growth mechanism of silicon nanowires and their quantum confinement effect

Authors
Feng, SQ Yu, DP Zhang, HZ Bai, ZG Ding, Y
Citation
Sq. Feng et al., The growth mechanism of silicon nanowires and their quantum confinement effect, J CRYST GR, 209(2-3), 2000, pp. 513-517
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
209
Issue
2-3
Year of publication
2000
Pages
513 - 517
Database
ISI
SICI code
0022-0248(20000201)209:2-3<513:TGMOSN>2.0.ZU;2-K
Abstract
Silicon nanowires (SiNWs) with controlled diameters have been synthesized u sing a physical evaporation method. The growth mechanism of SiNWs is descri bed based on the vapor-liquid-solid (VLS) model, which can well explain muc h of the morphology of SiNWs. The quantum confinement effect of SiNWs has b een studied by photoluminescence (PL) measurements. (C) 2000 Elsevier Scien ce B.V. All rights reserved.