Fabrication of selectively grown II-VI widegap semiconductor photonic dotson (001)GaAs with MOMBE

Selectively grown ZnSe/ZnS photonic dot structures on (001)GaAs were studie d with metalorganic molecular-beam epitaxy (MOMBE). ZnSe/ZnS photonic dots have four smooth {034} facets. These photonic dot structures show the optic al resonances by microreflection measurements and act as three-dimensionall y confined optical cavities. For controlling the position of the ZnSe activ e layer, the initial growth process of the ZnS dot structure was studied. I t was found that the delay of the growth initiation exists in the small-are a selective growth. Optical properties of the ZnSe/ZnS photonic dots were a lso discussed and weak modulation of the spontaneous emission by optical re sonance was observed by the microphotoluminescence measurements. The lumine scence was superimposed with the one from the ZnSe layers grown on the {034 } ZnS side facets which were not coupled with the cavity modes. The modulat ion effects were much improved by etching the external ZnSe layers on the { 034} ZnS facets. (C) 2000 Elsevier Science B.V. All rights reserved.