Effects of oxygen plasma condition on MBE growth of ZnO
Citation
K. Sakurai et al., Effects of oxygen plasma condition on MBE growth of ZnO, J CRYST GR, 209(2-3), 2000, pp. 522-525
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
SICI code
0022-0248(20000201)209:2-3<522:EOOPCO>2.0.ZU;2-H
Abstract
We report growth condition optimizations of ZnO films by plasma-assisted mo
lecular beam epitaxy. Effects of oxygen plasma conditions on film quality w
ere evaluated by photoluminescence, X-ray characterization and scanning ele
ctron microscopy. From the growth experiments on c-plane sapphire and bulk
ZnO ( + c, - c) substrates, it was suggested that the surface morphology is
strongly related with the growth direction of ZnO parallel to its c-axis,
and was found to be controllable by optimization of oxygen plasma condition
s. (C) 2000 Elsevier Science B,V. All rights reserved.