ANOMALOUS STRUCTURE IN DOPING LEVEL DEPENDENCE OF NORMAL RESISTIVITY OF LA2-XSRXCUO4

We experimentally studied the anomaly found in the doping level x depe ndence of the normal resistivity rho of carefully made bulk samples of La2-xSrxCuO4 in 0<x<0.45. The general feature of rho(x) is decreasing function in 0<x<0.25 (hole region), and increasing function in 0.25<x <0.45 (electron region). Clear depressions of p appear in series on si ngular levels x=xn in hole region and on x=yn in electron region (n, i nteger). where the separations between them are DELTAXn=Xn-Xn+1 almost -equal-to 1/4(n)-1/4(n+1) and DELTAYn=Yn+1-Yn almost-equal-to (1/4(n)- 1/4(n+1))/2.