Growth of ZnSe single crystals

The growth conditions of ZnSe single crystals were investigated by chemical vapor transport (CVT) and physical vapor transport (PVT) methods. The grow th temperatures were about 850 degrees C (CVT) and 1100 degrees C (PVT). Si ngle crystals of 18-20 mm diameter. 30 mm long and orange colored were grow n. The homogeneity of crystals was measured. The etch pit density of good c rystals is in the range of (1-4) x 10(4) cm(-2) full-width at half-maximum (FWHM) of (0 0 4) X-ray double crystal rocking curve is 17 arcsec. These da ta indicate that the crystals have good homogeneity and no twin crystal bou ndaries. (C) 2000 Elsevier Science B.V. All rights reserved.