Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition

We have investigated the growth of GaN buffers by metalorganic chemical vap or deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AF M) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth r ate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth indep endently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the exper imental results, a model was given to interpret the formation of hexagonal- phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FW HM) value as small as 5.6 nm was observed at room temperature. The backgrou nd carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).