Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE

We have investigated the effect of high-temperature annealing on device per formance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters f or the C-doped base layer. Carbon doping was achieved either via TMG and As H3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier proper ties even at doping levels of p = 1 x 10(19) cm(-3). The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradat ion starts is both a function of doping method and carbon concentration.