Rf. Kopf et al., Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications, J ELEC MAT, 29(2), 2000, pp. 222-224
We have fabricated reduced area InGaAs/lnP DHBTs for high speed circuit app
lications. To produce the small dimensions required, a process involving bo
th wet chemical and ECR plasma etchingwas developed. Optical emission spect
ros-copy was used for end-point detection during plasma etching, With this
improved process, an f(t) of 170 and f(max) of 200 GHz were achieved for 1.
2 x 3 mu m(2) emitter size devices with a 500 Angstrom base.