Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb st ructure of anodic alumina was synthesized through a gas reaction of Ga2O va por with a constant ammonia atmosphere at 1273 K in the presence of nano-si zed metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transm ission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pore s of anodic alumina about 20 nm in diameter and 40-50 mu m in length. The g rowth mechanism of the ordered nanostructure is discussed. The photolumines cence spectrum of this nanostructure is also reported.