Deposition of crystal polythiophene thin films by KrF excimer laser ablation

Thin films of polythiophene, a kind of polyheterocyclic compound with hydro gen function groups, were deposited by KrF excimer laser ablation of a comp ressed solid target in a vacuum chamber. The laser pulse fluence was approx imately selected at 2 J/cm(2) with a pulse duration of 25 ns. The structura l, topographic, and electronic properties of the deposited thin films were analyzed by atomic force microscope, x-ray diffraction, and Raman and infra red spectroscopy measurements. Deposited thin films were observed to have g ood crystal properties and to be composed of crystalline cubes with a unifo rm size of 0.1 mu m. The electronic structure of the deposited thin films s hould be different from the target materials, resulting from the laser irra diation effects. The influence of the deposition temperature on the structu ral and electronic properties of the deposited thin films was studied.