High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapordeposition system

Authors
Luo, GL Lin, XF Chen, PY Tsian, PX
Citation
Gl. Luo et al., High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapordeposition system, J MAT SCI T, 16(1), 2000, pp. 94-96
Citations number
16
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302 → ACNP
Volume
16
Issue
1
Year of publication
2000
Pages
94 - 96
Database
ISI
SICI code
1005-0302(200001)16:1<94:HQSLDB>2.0.ZU;2-7
Abstract
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited a t 550 degrees C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscatteri ng spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sh arply defined.