Magnetic resonance studies on radiation-induced point defects in mixed oxide glasses. II. Spin centers in alkali silicate glasses

Citation
Ia. Shkrob et al., Magnetic resonance studies on radiation-induced point defects in mixed oxide glasses. II. Spin centers in alkali silicate glasses, J NON-CRYST, 262(1-3), 2000, pp. 35-65
Citations number
109
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
262
Issue
1-3
Year of publication
2000
Pages
35 - 65
Database
ISI
SICI code
0022-3093(200002)262:1-3<35:MRSORP>2.0.ZU;2-S
Abstract
Irradiation of alkali silicate glasses results in the formation of metastab le spin centers, such as oxygen hole centers (OHC1 and OHC2), silicon perox y radicals and a silicon dangling bond (E' center). In this work, electron paramagnetic resonance (EPR) and electron nuclear double magnetic resonance (ENDOR) are used to study these spin-1/2 defects. It is shown that in a su bset of the OHC1 centers the drop SiO . radical is strongly coupled to a si ngle alkali cation, Thermally activated swinging motion of this cation caus es asymmetric T-2 relaxation and changes electron spin echo envelop modulat ion (ESEEM) spectra. It is argued that trapping of the hole by non-bridging oxygen atoms does not result in the release of a compensating alkali catio n. Rather, the O-Alk bond elongates and the whole structure relaxes. This v iew is supported by semi-empirical and ab initio calculations. The observed axial symmetry of the g-tensor for OHC2 is the result of rapid tunneling o f the electron between two degenerate sites with rate (0.2 - 50) x 10(11) s (-1) and activation energy similar to 10 meV. This center is a hole trapped on a tetrahedral >SiO22-:- unit or a planar -SiO2- unit. It is demonstrate d that silicon peroxy radicals are not formed by charge trapping. Their gen eration is temperature-independent and occurs via the decay of self-trapped excitons. It seems likely that the same process yields silicon dangling bo nd centers. (C) 2000 Elsevier Science B.V. All rights reserved.