A process for copper film deposition by pyrolysis of organic copper materials

A new technique of copper (Cu) film deposition by simple pyrolysis of coppe r hexafluoroacetylacetonate vinyltrimethylsilane [Cu1+(hfac)(vtms)] in liqu id phase has been proposed. The Cu films were deposited in air and nitrogen (N-2) ambiences as a function of substrate temperature. Both Cu films show grain-like structures, and the grain size increased with increasing deposi tion temperature. X-ray diffraction patterns for all Cu films deposited in air and N-2 show the diffraction peaks corresponding to (111): (200), (220) , and (311) crystal planes of Cu. The difference in lattice constant betwee n the deposited Cu films and bulk Cu is less than 0.3%. The Cu films contai n oxygen (O), carbon (C), and fluorine (F) as impurities. The relative conc entrations of O, C, and F atoms are less than 10 atom %. The relative Cu co ncentrations in the films are over 80 atom %. The resistivity values for Cu films deposited at 250 degrees C in air and N-2 ambiences were 65 and 16 m u Omega-cm, respectively. The differences between this deposition method an d metallorganic chemical vapor deposition is also discussed. (C) 2000 The E lectrochemical Society. S0013-4651(99)06-158-3. All rights reserved.