Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N-2

Single-wavelength in situ ellipsometry shows that the SiNx:H/GaAs(110) inte rface formed during the deposition of silicon nitride using an electron-cyc lotron resonance nitrogen plasma source with silane introduced downstream i s created by the initial nitridation reaction of the substrate. Angle-depen dent X-ray photoelectron spectroscopy shows that the nitridation of GaAs fo rms a GaN layer separated from the substrate by a layer with As-N bonds, an d spectroscopic ellipsometry indicates that the GaN layer has a large void fraction. Interface-state densities in the low 10(12) eV(-1) cm(-1) range m easured on SiNx:H/Si/GaAs(110) capacitors did not change significantly if a Si interface control layer 0.8-2 nm thick was deposited on cleaved GaAs(11 0) surfaces prior to silicon nitride deposition. (C) 2000 The Electrochemic al Society. S0013-4651(99)04-075-6. All rights reserved.