THE OPTIMUM CONDITION OF SINGLE-CRYSTAL GROWTH OF (PR,CE)2CUO4 BY THETRAVELING-SOLVENT FLOATING-ZONE METHOD

Authors
HAN TS OKA K KAWANAKA H
Citation
Ts. Han et al., THE OPTIMUM CONDITION OF SINGLE-CRYSTAL GROWTH OF (PR,CE)2CUO4 BY THETRAVELING-SOLVENT FLOATING-ZONE METHOD, Physica. B, Condensed matter, 194, 1994, pp. 2241-2242
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
2
Pages
2241 - 2242
Database
ISI
SICI code
0921-4526(1994)194:<2241:TOCOSG>2.0.ZU;2-N
Abstract
We have grown single crystals of Pr2-xCexCuO4 (x=0.14 and 0.16) superc onductor by the travelling-solvent floating-zone(TSFZ) method. In the crystal growth process, We chose double-scanning technique and used ai r-or mixed gas (Ar93% + O(2)7%) for atmosphere. As the results, a high ly-stabilized single-crystal growth process was achieved compared with the conventional single-scanning method.