A new crystal growth model based on a stochastic method under an external field

Citation
H. Mizuseki et al., A new crystal growth model based on a stochastic method under an external field, MODEL SIM M, 8(1), 2000, pp. 1-11
Citations number
53
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
ISSN journal
09650393 → ACNP
Volume
8
Issue
1
Year of publication
2000
Pages
1 - 11
Database
ISI
SICI code
0965-0393(200001)8:1<1:ANCGMB>2.0.ZU;2-J
Abstract
A new crystal growth model, based on Monte Carlo simulation, is introduced to describe the diffusion-limited aggregation (DLA) with an external force that arises from Lorentz's and/or Coulombic interactions. Specific crystal patterns grown under these external forces are reproduced by a Monte Carlo simulation. In the present multi-purpose model, the basic movement of a par ticle is a random walk, with different transition probabilities in differen t directions to represent the effect of the external forces. In some cases, patterns that are qualitatively different from standard DLA clusters are o bserved, and they are successfully compared with existing experiments and t heories.