Magnetic behavior of Gd2CuGe3: Electrical resistance minimum above the Neel temperature

Authors
Majumdar, S Sampathkumaran, EV
Citation
S. Majumdar et Ev. Sampathkumaran, Magnetic behavior of Gd2CuGe3: Electrical resistance minimum above the Neel temperature, PHYS REV B, 61(1), 2000, pp. 43-45
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
1
Year of publication
2000
Pages
43 - 45
Database
ISI
SICI code
1098-0121(20000101)61:1<43:MBOGER>2.0.ZU;2-J
Abstract
We report the formation of a compound, Gd2CuGe3, in a AlB2-derived crystal structure and its temperature(T) dependent magnetic susceptibility, heat-ca pacity, electrical-resistivity (rho), and magnetoresistance behavior. The r esults suggest that this compound orders antiferromagnetically below 12 K. The most notable finding is that the T derivative of rho is negative below about 25 K, resulting in a minimum in the plot of rho versus T around this temperature, a feature not very common among Gd alloys.