We present results of the first Vibrational photon-echo, transient-grating,
and temperature dependent transient- bleaching experiments on a-Si:H. Usin
g these techniques, and the infrared Light of a free electron laser, the vi
brational population decay and phase relaxation of the Si-H stretching mode
were investigated. Careful analysis of the data indicates that the vibrati
onal energy relaxes directly into SI-H bending modes and Si phonons, with a
distribution of rates determined by the amorphous host. Conversely, the pu
re dephasing appears to be single exponential, and can be modeled by dephas
ing via two-phonon interactions.