Nanoindentation experiments are an excellent probe of micromechanical prope
rties, but their interpretation is complicated by their multiscale nature.
We report simulations of silicon nanoindentation, based on an extended Vers
ion of the local quasicontinuum model, capable of handling complex Bravais
crystals. Our simulations reproduce the experimental load vs displacement c
urves and provide microscopic information such as the distribution of trans
formed metallic phases of silicon underneath the indenter. This information
is linked to the macroscopic electrical resistance, giving a satisfactory
explanation of experimental results.