The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures

Authors
Aleshkin, VY Zvonkov, BN Malkina, IG Chernov, AL Romanov, YA
Citation
Vy. Aleshkin et al., The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures, PHYS LOW-D, 12, 1999, pp. 15-21
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
12
Year of publication
1999
Pages
15 - 21
Database
ISI
SICI code
0204-3467(1999)12:<15:TMFLPL>2.0.ZU;2-2
Abstract
The mechanisms for linear polarization loss of photoluminescence from quant um wells and quantum dots in InGaAs/GaAs structures observed from cleavages have been investigated. It is found that the mechanisms for polarization l oss of in-plane photoluminescence are different for OD and 2D hole states. It is shown that the potential energy asymmetry in the InGaAs layer plays a n important role in the loss of the photoluminescence polarization from qua ntum well.