The island film growth kinetics at the initial stages has been studied to d
etermine the reasons for layer-to-pseudolayer growth transition in thin fil
ms caused by the change of the condensation conditions. The process is math
ematically described by a set of differential rate equations for the format
ion of islands of different size, The change of diffusion activation energy
, condensation temperature and deposition rate induces the island-to-layer
growth transition. The regions of the island and layer growth in the "tempe
rature - condensation rate" coordinates have been found.