Organic field-effect transistors based on pentacene single crystals, prepar
ed with an amorphous aluminum oxide gate insulator, are capable of ambipola
r operation and can be used for the preparation of complementary inverter c
ircuits. The field-effect mobilities of carriers in these transistors incre
ase from 2.7 and 1.7 square centimeters per volt per second at room tempera
ture up to 1200 and 320 square centimeters per volt per second at Low tempe
ratures for hole and electron transport, respectively, following a power-la
w dependence. The possible simplification of the fabrication process of com
plementary Logic circuits with these transistors, together with the high ca
rrier mobilities, may be seen as another step toward applications of plasti
c electronics.