Ambipolar pentacene field-effect transistors and inverters

Citation
Jh. Schon et al., Ambipolar pentacene field-effect transistors and inverters, SCIENCE, 287(5455), 2000, pp. 1022-1023
Citations number
25
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
00368075 → ACNP
Volume
287
Issue
5455
Year of publication
2000
Pages
1022 - 1023
Database
ISI
SICI code
0036-8075(20000211)287:5455<1022:APFTAI>2.0.ZU;2-9
Abstract
Organic field-effect transistors based on pentacene single crystals, prepar ed with an amorphous aluminum oxide gate insulator, are capable of ambipola r operation and can be used for the preparation of complementary inverter c ircuits. The field-effect mobilities of carriers in these transistors incre ase from 2.7 and 1.7 square centimeters per volt per second at room tempera ture up to 1200 and 320 square centimeters per volt per second at Low tempe ratures for hole and electron transport, respectively, following a power-la w dependence. The possible simplification of the fabrication process of com plementary Logic circuits with these transistors, together with the high ca rrier mobilities, may be seen as another step toward applications of plasti c electronics.