PROCESSING TECHNIQUES TO LOCALLY ALTER THE T(C) OF ALUMINUM THIN-FILMS

We report on the successful use of reactive ion etching techniques and ion implantation to locally alter the superconducting transition temp erature of aluminum thin films by as much as 5%. The mechanism by whic h T(c) is shifted is by the replacement of surface oxygen with fluorin e in the case of the reactive ion etch, with a secondary effect due to damage being evident at long exposure times. The ion implantation pro duces a shift in T(c) of similar magnitude through the damage induced uniformly in the entire film.