Electrophysical properties of Hg1-xCdxTe crystals under hydrostatic pressure

Authors
Virt, IV Prozorovskii, VD Tsyutsyura, DI
Citation
Iv. Virt et al., Electrophysical properties of Hg1-xCdxTe crystals under hydrostatic pressure, SEMICONDUCT, 34(1), 2000, pp. 32-34
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
1
Year of publication
2000
Pages
32 - 34
Database
ISI
SICI code
1063-7826(2000)34:1<32:EPOHCU>2.0.ZU;2-K
Abstract
The electrophysical properties of Hg1-xCdxTe crystals subjected to hydrosta tic pressure were studied by a noncontact method. It is shown that there ex ists the effect of irreversible change in the state of native lattice defec ts. A decrease in hole (acceptor) concentration and an increase in electron mobility are observed in the samples subjected to pressure. (C) 2000 MAIK "Nauka/Interperiodica".