Energy distribution of localized states in amorphous hydrogenated silicon

Authors
Kougiya, KV Terukov, EI Trapeznikova, IN
Citation
Kv. Kougiya et al., Energy distribution of localized states in amorphous hydrogenated silicon, SEMICONDUCT, 34(1), 2000, pp. 81-86
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
1
Year of publication
2000
Pages
81 - 86
Database
ISI
SICI code
1063-7826(2000)34:1<81:EDOLSI>2.0.ZU;2-D
Abstract
A new method for determining the spectral dependence of the optical-absorpt ion coefficient in amorphous hydrogenated silicon is suggested. The method is based on the analysis of spectral and temperature dependences of transie nt photoconductivity in this material. Energy distribution of localized sta tes involved in recombination of nonequilibrium holes was calculated. (C) 2 000 MAIK "Nauka/Interperiodica".