A new method for determining the spectral dependence of the optical-absorpt
ion coefficient in amorphous hydrogenated silicon is suggested. The method
is based on the analysis of spectral and temperature dependences of transie
nt photoconductivity in this material. Energy distribution of localized sta
tes involved in recombination of nonequilibrium holes was calculated. (C) 2
000 MAIK "Nauka/Interperiodica".