Growth of a-C : H and a-C : H < Cu > films produced by magnetron sputtering

Citation
Tk. Zvonareva et al., Growth of a-C : H and a-C : H < Cu > films produced by magnetron sputtering, SEMICONDUCT, 34(1), 2000, pp. 98-103
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
1
Year of publication
2000
Pages
98 - 103
Database
ISI
SICI code
1063-7826(2000)34:1<98:GOA:HA>2.0.ZU;2-9
Abstract
Growth behavior of a-C:H and a-C:H[Cu] films produced by the magnetron sput tering of a composite target consisting of graphite and copper plates in an argon-hydrogen atmosphere was studied by infrared spectroscopy, scanning e lectron microscopy, and ellipsometry. The introduction of copper into amorp hous hydrogenated carbon films was shown to cause no marked changes in the carbon-hydrogen bonds in the matrix. In the a-C:H[Cu] films similar to 2 mu m thick, a thin uniform layer (similar to 1000 Angstrom) was found to adjo in the substrate; closer to the free surface, the layer acquires a columnar texture with columns oriented from the substrate to the surface. The resul ts of ellipsometry measurements were analyzed in terms of a two-layer film model. (C) 2000 MAIK "Nauka/Interperiodica".