Light emitting diodes for the spectral range of lambda=3.3-4.3 mu m fabricated from the InGaAs- and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20-180 degrees C

Light emitting diodes (LEDs) with lambda(max) = 3.4 and 4.3 mu m (t = 20 de grees C) were studied at elevated temperatures. It is demonstrated that LED s operating in the temperature range t = 20-180 degrees C can be described using the classical concepts of injection radiation sources and the process es of charge carrier recombination. The temperature dependences of reverse currents in the saturation regions of current-voltage characteristics are c onsistent with the increase in the intrinsic-carrier concentration accordin g to the Shockley theory. The emission spectra are described on the assumpt ion of the direct band-to-band transitions, spherically symmetric bands, an d thermalized charge carriers. The current-power characteristics are propor tional to I-3/2 suggesting that the contribution of the nonradiative Auger recombination is dominant. The radiation power decreases exponentially with the temperature which is characteristic of the CHSH and CHCC processes. (C ) 2000 MAIK "Nauka/Interperiodica".