Current transport in the Me-n-n(+) Schottky-barrier structures

A model of current transport in Schottky-barrier diodes based on the concep t of ballistic electron transport through a thin base is proposed. The meth od of transfer matrix was used in order to obtain tunneling probabilities, which were used in calculation of the forward and reverse current-voltage ( I-V) characteristics, as well as of the transit time. It is demonstrated th at by considering a potential in full form, a good agreement between the ex perimental and calculated I-V characteristics is obtained. It is found that a consideration of the role of a thin base causes the current to decrease; the probability of tunneling through the n-base can be close to unity. It is demonstrated that the tunneling probability has a large number of local resonances and that the energy dependence of the transit time is nonmonoton ic. This is caused by the influence of the base region. The boundary operat ing frequency of diodes is evaluated and is found to be 10-100-fold higher than that obtained from the classical concept. (C) 2000 MAIK "Nauka/Interpe riodica".