Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage

Epitaxial-diffused 6H-SiC diodes incorporating a high-resistivity interlaye r in the base were studied; the resistance of this interlayer varied when t he forward-bias voltage was applied. It is shown that, in spite of the abse nce of direct indications of the effects of the series resistance (the capa citance is independent of frequency and the value of capacitive cutoff volt age is small), the capacitance measurements for such structures may be inco rrect. (C) 2000 MAIK "Nauka/Interperiodica".