Closed-loop bias voltage control for plasma etching

Authors
Patrick, R Baldwin, S Williams, N
Citation
R. Patrick et al., Closed-loop bias voltage control for plasma etching, SOL ST TECH, 43(2), 2000, pp. 59
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
43
Issue
2
Year of publication
2000
Database
ISI
SICI code
0038-111X(200002)43:2<59:CBVCFP>2.0.ZU;2-M
Abstract
The stated goal for high-density etchers of completely decoupling plasma ge neration from ion energy control cannot be achieved with conventional metho ds of monitoring RF power delivery. By using a closed-loop control system b ased on a voltage sensor to control the RF voltage at the chuck, the intera ction of plasma density and bias voltage seen in conventional systems can b e eliminated.