E. Kasapoglu et al., Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field, SUPERLATT M, 26(6), 1999, pp. 395-404
The intersubband optical absorption in symmetric and asymmetric, single and
coupled, double GaAs/Ga1-xAlxAs quantum wells is calculated. The results h
ave been obtained in the presence of a uniform electric field as a function
of the potential symmetry, size of the quantum well, and coupling paramete
r of the wells. In coupled double quantum wells we obtain a large Stark eff
ect that can be used to fabricate tuneable photodetectors. We show that the
effect of an applied electric field on the intersubband optical absorption
is similar to changes in the dimensions of the structure. This behaviour i
n the intersubband optical absorption for different wells and barrier geome
tries can be used to study these systems in regions of interest, without th
e need for the growth of many different samples. (C) 1999 Academic Press.